1.广州大学物理与材料科学学院,广东广州510006;2.宁夏荣光电节能科技实业有限公司,宁夏银川750299
Journal of Guangzhou University(Natural Science Edition).
2023, 22(1):
63-77.
As a wide band gap semiconductor, Aluminum Nitride ( AlN) has excellent physical and chemical properties and has been widely used in the field of Light Emitting Diode ( LED) . Similarly,Gallium Nitride ( GaN) , which is well developed, also plays an irreplaceable role in this field. High performance devices need a good epitaxial layer. The traditional preparation method of AlGaN based ultraviolet LED( UV LED) epitaxy layer is Metal Organic Chemical Vapor Deposition ( MOCVD) .However, due to the strong pre reaction and slow migration rate of Al atoms in this method, a large number of defects appear in the epitaxial layer, which reduces the performance of UV LED devices.In addition, due to the difference in the refractive index of different materials and the difference in the refractive index of materials and air, light has difficulty escaping to the outside world, and most of the light is localized in the chip, thus reducing the light extraction efficiency and light intensity. In order to improve the optical performance of the device, a new UV LED structure is proposed. In this paper, Finite Difference Time Domain ( FDTD) software is used to simulate the light extraction efficiency and light intensity of the epitaxial structure. It is found that compared with the traditional LED structure, the light extraction efficiency of the new UV LED structure in transverse magnetic wave ( TM) mode and transverse electric wave ( TE) mode is increased by 19 1% and 29 3% , respectively, and the maximum light intensity is increased by 42 78% and 47 18% , respectively, which significantly improves the optical performance of the device. In addition, the influence of the structure parameters of the epitaxial layer of the new UV LED on the overall optical properties of the device is also studied in this paper. Under the constant conditions of light source, physical model size, simulation conditions and other factors, the optimal structural parameters of the optical performance are obtained.